VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD

VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD

Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KHOURY MAROUN GEORGES, LIU HONGYUE, LEE BRIAN, CARTER ANDREW JOHN GJEVRE
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor being electrically coupled to the variable resistive data cell and a source line. The write current passes through the transistor in punchthrough mode.