METHODS OF FORMING REVERSED PATTERNS IN A SUBSTRATE AND SEMICONDUCTOR STRUCTURES FORMED DURING SAME

A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned res...

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Bibliographische Detailangaben
Hauptverfasser:	DEVILLIERS ANTON J, JAIN KAVERI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.