LATTICE-MATCHED CHALCOGENIDE MULTI-JUNCTION PHOTOVOLTAIC CELL

A multi junction photovoltaic device is disclosed. In certain examples, the device includes an upper photovoltaic cell comprising a first plurality of layers of films, including a first active layer of a chalcogenide having a first lattice constant and first energy band gap, and a lower photovoltaic...

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Bibliographische Detailangaben
Hauptverfasser:	NICHOLS BETH M, BERNIUS MARK T, HALEY ROBERT P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	A multi junction photovoltaic device is disclosed. In certain examples, the device includes an upper photovoltaic cell comprising a first plurality of layers of films, including a first active layer of a chalcogenide having a first lattice constant and first energy band gap, and a lower photovoltaic cell disposed below the upper photovoltaic cell and adapted to receive photon radiation passing through the upper photovoltaic cell, and comprising a second plurality of layers of films, including an active second layer of a IB-IIIA-chalcogenide having a second lattice constant and a second energy band gap. The first lattice constant differs from the second lattice constant by no more than about 10%. The first energy band gap can be greater than the second energy band gap by at least about 0.5 eV, or 0.6 eV, or 0.7 eV.