METHOD OF FABRICATING ESD DEVICES USING MOSFET AND LDMOS ION IMPLANTATIONS

METHOD OF FABRICATING ESD DEVICES USING MOSFET AND LDMOS ION IMPLANTATIONS

A method of forming complementary metal-oxide-silicon logic field effect transistors, high power transistors and electrostatic discharge protection diodes and/or electrostatic discharge protection shunt transistors on the same integrated circuit chip using ion implantations used to fabricate the fie...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: VOLDMAN STEVEN HOWARD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming complementary metal-oxide-silicon logic field effect transistors, high power transistors and electrostatic discharge protection diodes and/or electrostatic discharge protection shunt transistors on the same integrated circuit chip using ion implantations used to fabricate the field effect transistors and high-power transistor to simultaneously fabricate the electrostatic discharge protection diodes and/or electrostatic discharge protection shunt transistors.