Semiconductor substrate, semiconductor device, and manufacturing methods thereof

The present invention provides a method of manufacturing a semiconductor substrate that includes a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor l...

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Bibliographische Detailangaben
1. Verfasser: SAKAI SHIHIRO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention provides a method of manufacturing a semiconductor substrate that includes a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity formed in the first semiconductor layer under the metallic material layer.