EDGE-EMITTING SEMICONDUCTOR LASER WITH PHOTONIC-BANDGAP STRUCTURE FORMED BY INTERMIXING

EDGE-EMITTING SEMICONDUCTOR LASER WITH PHOTONIC-BANDGAP STRUCTURE FORMED BY INTERMIXING

A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high...

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Hauptverfasser: WATSON JASON P, HASENBERG THOMAS C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WATSON JASON P
HASENBERG THOMAS C
description A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title EDGE-EMITTING SEMICONDUCTOR LASER WITH PHOTONIC-BANDGAP STRUCTURE FORMED BY INTERMIXING
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