EDGE-EMITTING SEMICONDUCTOR LASER WITH PHOTONIC-BANDGAP STRUCTURE FORMED BY INTERMIXING

A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high...

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Bibliographische Detailangaben
Hauptverfasser:	WATSON JASON P, HASENBERG THOMAS C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.