Semiconductor Device Having a Strain Inducing Sidewall Spacer and a Method of Manufacture Therefor

Semiconductor Device Having a Strain Inducing Sidewall Spacer and a Method of Manufacture Therefor

The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure over a substrate, and forming a strain inducing sidewall spacer proximate a sidewall of the gate structure, the stra...

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Bibliographische Detailangaben
Hauptverfasser: NANDAKUMAR MAHALINGAM, ADAM LAHIR SHAIK, BATHER WAYNE A, MEHTA NARENDRA SINGH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure over a substrate, and forming a strain inducing sidewall spacer proximate a sidewall of the gate structure, the strain inducing sidewall configured to introduce strain in a channel region below the gate structure.