PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE

A phase-change memory device has a plurality of first wiring lines; a plurality of memory cells that are provided on the plurality of first wiring lines; a plurality of second wiring lines that are provided on the plurality of memory cells, respectively; and an interlayer insulating film that is formed between the plurality of first wiring lines and the plurality of second wiring lines and insulates the plurality of first wiring lines from the plurality of second wiring lines; wherein each of the memory cells includes a heat source element that is supplied with a current and generates heat and a phase-change element that is changed to an amorphous state or a crystalline state according to a cooling speed after being heated by the heat source element, a resistance value of the phase-change element varying with the change in the state, and wherein a void is formed between the two adjacent memory cells in the interlayer insulating film.