Electron Beam Simulation Corner Correction For Optical Lithpography

Methods for approximating simulated contours are provided herein. With some implementations, a function that incorporates a Gaussian proximity kernel to approximate the electron beam exposure effects is used to simulate a printed image. Subsequently, one or more corners of the simulated printed imag...

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Bibliographische Detailangaben
1. Verfasser:	GRANIK YURI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	Methods for approximating simulated contours are provided herein. With some implementations, a function that incorporates a Gaussian proximity kernel to approximate the electron beam exposure effects is used to simulate a printed image. Subsequently, one or more corners of the simulated printed image may be approximated by two or more straight edges. In various implementations, the number of straight edges used to approximate the corner as well as the orientation of the one or more straight edges is determined based upon the characteristics of the corner, such as, the corner having an obtuse angle larger than 135 degrees for example. With various implementations, two straight edges are used to approximate the corner, the orientation of the two straight edges being determined by a first point, a second point, and a shared corner point.