SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME8027
A method of forming a semiconductor device includes the following processes. A first insulating film is formed over an etching stopper film. The etching stopper film has wet-etching resistance. A second insulating film is formed over the second etching stopper. The second insulating film is higher i...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming a semiconductor device includes the following processes. A first insulating film is formed over an etching stopper film. The etching stopper film has wet-etching resistance. A second insulating film is formed over the second etching stopper. The second insulating film is higher in wet-etching rate than the first insulating film. An opening is formed, which penetrates the etching stopper and the first and second insulating films. A bottom electrode is formed in the opening. The second insulating film is removed by carrying out a wet etching process to expose the bottom electrode. |
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