PROCESS AND APPARATUS FOR ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION COATING OF A SUBSTRATE

The invention relates to a process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating using a first electrode (33) and a second electrode (34). The second electrode is positioned apart from the first electrode thereby defining a volume space (42) between the fir...

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Bibliographische Detailangaben
Hauptverfasser: HALEY, JR. ROBERT P, DE RIJCKE ALPHONSUS J.P, RHOTON CHRISTINA A, VREYS MARK G.C
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention relates to a process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating using a first electrode (33) and a second electrode (34). The second electrode is positioned apart from the first electrode thereby defining a volume space (42) between the first and second electrodes which volume space is covered by a duct sealed to the electrodes. Gas is flowed from the volume space between the first and second electrodes at the same or at a greater flow rate than the sum of gaseous coating precursor mixtures flowed to the first and second electrodes. In addition, the invention relates to an improved electrode assembly for use in an atmospheric pressure plasma enhanced chemical vapor deposition coating system. The electrode assembly includes a means for distributing a gaseous coating precursor mixture to emerge from an electrode assembly. The improvement relates to a gas distributing subassembly of the electrode assembly.