SYSTEMATIC ERROR CORRECTION FOR MULTI-LEVEL FLASH MEMORY

SYSTEMATIC ERROR CORRECTION FOR MULTI-LEVEL FLASH MEMORY

In accordance with exemplary embodiments, a multi-level flash memory employs error correction of systematic errors when reading multi-level flash memory. Error correction includes i) detection of each systematic error, ii) feedback of the systematic error to circuitry within the memory, and iii) sub...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOHLER ROSS A, WERNER WAYNE E, MCPARTLAND RICHARD J
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Beschreibung
Zusammenfassung:In accordance with exemplary embodiments, a multi-level flash memory employs error correction of systematic errors when reading multi-level flash memory. Error correction includes i) detection of each systematic error, ii) feedback of the systematic error to circuitry within the memory, and iii) subsequent adjustment within that circuitry to cause a correction of systematic error in the output signal of the multi-level flash memory.