SEMICONDUCTOR DEVICE INCLUDING A CAVITY

A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off...

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Bibliographische Detailangaben
Hauptverfasser: KAUTZSCH THORALF, ROCHEL MARKUS
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.