MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME

A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an a...

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Bibliographische Detailangaben
Hauptverfasser: KATOU HITOSHI, KOKUBO TERUKAZU, NAKAGAWA HISASHI, NOBE YOUHEI, ISHIZUKI KENJI
Format: Patent
Sprache:eng
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Zusammenfassung:A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1). wherein R1 to R6 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, provided that at least one of R1 to R6 represents a halogen atom, a hydroxyl group, an acetoxy group, a phenoxy group, or an alkoxy group, and n represents an integer from 0 to 3.