PATTERN-CORRECTION SUPPORTING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PATTERN-CORRECTION SUPPORTING PROGRAM

Design data corresponding to a target layout pattern is created, a layout value of the created design data is changed, optical proximity correction is applied to a layout pattern obtained from the changed design data, a pattern on wafer formed on a wafer to correspond to the layout pattern is calcul...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAKAHATA KAZUHIRO, MIMOTOGI SHOJI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Design data corresponding to a target layout pattern is created, a layout value of the created design data is changed, optical proximity correction is applied to a layout pattern obtained from the changed design data, a pattern on wafer formed on a wafer to correspond to the layout pattern is calculated by using a photomask on which the layout pattern subjected to the optical proximity correction is formed, and the pattern on wafer and the target layout pattern before the change of the layout value are compared.