LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES

LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES

Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LETZ TOBIAS, FEUSTEL FRANK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.