PHASE SHIFT MASK AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT

There are provided a phase shift mask with a new structure. The phase shift mask provided includes: a substrate that is transparent to irradiation light, a shielding region formed on the substrate and in which a line pattern is formed, and a first transparent region and a second transparent region l...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	HIROSHIMA MASAHITO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	There are provided a phase shift mask with a new structure. The phase shift mask provided includes: a substrate that is transparent to irradiation light, a shielding region formed on the substrate and in which a line pattern is formed, and a first transparent region and a second transparent region located on respective opposite sides of the shielding region on the substrate, wherein a phase shifter is formed under the first transparent region, and the phase shifter has a side wall including an outward protruding bent portion. The phase shifter can be formed by, for example, irradiating and scanning a predetermined region of the substrate with femtosecond pulse laser light applied from above the substrate.