DIRECTIONAL GAS INJECTION FOR AN ION SOURCE CATHODE ASSEMBLY

In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamb...

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Bibliographische Detailangaben
Hauptverfasser: SINCLAIR FRANK, TWISS DAVID J, PLATOW WILHELM P, PEREL ALEXANDER S, COBB ERIC R, CAMPBELL CHRIS, CHANEY CRAIG R, KOO JOHN BON-WOONG
Format: Patent
Sprache:eng
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Zusammenfassung:In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.