Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same

A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100° C. per second or more, and, immediately...

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Bibliographische Detailangaben
Hauptverfasser:	KOO TAE-HYOUNG, KIM HEESUNG, CHO KYOOCHUL, KIM TAESUNG, CHOI JOONYOUNG, KIM YEONSOOK, CHOI SAM-JONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OFGENERAL APPLICATION ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEAT EXCHANGE IN GENERAL HEATING LIGHTING MECHANICAL ENGINEERING SEMICONDUCTOR DEVICES WEAPONS
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Beschreibung
Zusammenfassung:	A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100° C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about −70° C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100° C. or more.