MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME

MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME

Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusti...

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Bibliographische Detailangaben
Hauptverfasser: TAYLOR MICHAEL F, SCHIMERT THOMAS R, SYLLAIOS ALTHANASIOS J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.