ETCH REACTOR SUITABLE FOR ETCHING HIGH ASPECT RATIO FEATURES

Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixtu...

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Bibliographische Detailangaben
Hauptverfasser: LEHMANN THORSTEN, MATYUSHKIN ALEXANDER, RUPF JAN, SCANLAN DECLAN, DINEV JIVKO, ZHOU XIAOPING, OSWALD MANFRED, TILGER RON, ABOOAMERI FARID, LEUCKE UWE, MALETTA FRANCESCO, MEYE MARKUS, KOOSAU DENIS
Format: Patent
Sprache:eng
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Zusammenfassung:Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixture of the reactor, maintaining a plasma formed from the gas mixture, wherein bias power and RF power provided the reactor are pulsed, and etching the silicon layer in the presence of the plasma.