SEMICONDUCTOR DEVICE HAVING RESISTANCE BASED MEMORY ARRAY AND METHOD OF OPERATION ASSOCIATED THEREWITH

In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at...

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Bibliographische Detailangaben
Hauptverfasser: WANG QI, CHO WOOYEONG, CHOI HYUNHO, LEE KWANGJIN, KIM KWANGHO, KIM TAEK-SUNG, KIM HYE-JIN, LEE YONG-JUN
Format: Patent
Sprache:eng
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Zusammenfassung:In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.