BIT LINE BIAS FOR PROGRAMMING A MEMORY DEVICE

Bit line bias for programming a memory device is generally described. In one example, circuitry for bit line bias programming comprises a word line, one or more bit lines coupled with the word line, and one or more cells to be programmed to a target threshold voltage coupled with the word line and t...

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Hauptverfasser:	TIBURZI MARCO DOMENICO, DI IORIO ERCOLE ROSARIO
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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