BIT LINE BIAS FOR PROGRAMMING A MEMORY DEVICE

BIT LINE BIAS FOR PROGRAMMING A MEMORY DEVICE

Bit line bias for programming a memory device is generally described. In one example, circuitry for bit line bias programming comprises a word line, one or more bit lines coupled with the word line, and one or more cells to be programmed to a target threshold voltage coupled with the word line and t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TIBURZI MARCO DOMENICO, DI IORIO ERCOLE ROSARIO
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Bit line bias for programming a memory device is generally described. In one example, circuitry for bit line bias programming comprises a word line, one or more bit lines coupled with the word line, and one or more cells to be programmed to a target threshold voltage coupled with the word line and the one or more bit lines wherein a program speed of the one or more cells is increased by selectively pre-charging the one or more bit lines such that a single program pulse raises individual threshold voltages of the one or more cells to or above the target threshold voltage.