METHOD OF FORMING AMORPHOUS SILICON LAYER AND METHOD OF FABRICATING LCD USING THE SAME

METHOD OF FORMING AMORPHOUS SILICON LAYER AND METHOD OF FABRICATING LCD USING THE SAME

Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si-H to Si-H2 has a value equal to or less than 4 to 1, may be formed on the substrate using chemical va...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HWANG TAE-HYUNG, HONG SEOK-JOON, JEON HYUNG-II
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si-H to Si-H2 has a value equal to or less than 4 to 1, may be formed on the substrate using chemical vapor deposition equipment.