High-K dielectric metal gate device structure

A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS g...

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Bibliographische Detailangaben
Hauptverfasser: CHEN RYAN CHIA-JEN, TSENG JOSHUA, YANG JI-YI, HUANG KUO-TAI, LIN KANGNG
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric.