PATTERN DEPENDENT STRING RESISTANCE COMPENSATION

PATTERN DEPENDENT STRING RESISTANCE COMPENSATION

Pattern dependent string resistance compensation of a memory device is generally described. In one example, an electronic device includes a first string of memory cells and a first bit line coupled with the first string of memory cells wherein a memory cell of the first string of memory cells is rea...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CONENNA PASQUALE, DI IORIO ERCOLE ROSARIO
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Pattern dependent string resistance compensation of a memory device is generally described. In one example, an electronic device includes a first string of memory cells and a first bit line coupled with the first string of memory cells wherein a memory cell of the first string of memory cells is read, in part, by pre-charging the first bit line through the first string of memory cells to compensate for resistance of unselected cells in the first string of memory cells.