MECHANICALLY STABLE DIFFUSION BARRIER STACK AND METHOD FOR FABRICATING THE SAME

A mechanically stable diffusion barrier stack structure and method of fabricating the same is disclosed. The fusion barrier stack structure having a molybdenum nitride layer deposited on a molybdenum layer and operates to prevent diffusion between a semiconductor layer and a metal interconnect. The...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SANKUR HALUK, THOMAS MASON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!