Semiconductor device with semi-insulating substrate portions

A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may...

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Bibliographische Detailangaben
Hauptverfasser: LIN WENIN, LEE CHUAN-YING, TANG DENNY, CHENG H. C
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.