METHOD OF CLEANING FILM FORMING APPARATUS AND FILM FORMING APPARATUS

To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cle...

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Bibliographische Detailangaben
Hauptverfasser:	SHIGEMOTO TAKAMITSU, SONOBE JUN
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cleaning a film forming apparatus for removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium deposited on a processing chamber of the film forming apparatus after it is used for forming a thin film made of tantalum nitride, titanium nitride, tantalum, or titanium, the cleaning method comprising: a step of supplying process gas containing fluorine gas into the processing chamber of the film forming apparatus; and a step of heating the processing chamber.