DOPANT IMPLANTATION METHOD AND INTEGRATED CIRCUITS FORMED THEREBY

A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	WU BONE-FONG, CHUANG YEN, TING CHIEH CHIH, WANG SHAO HUA, CHEN PU-FANG, CHANG TSE-EN, CHANG CHIH-FU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.