Low-K Precursors Based on Silicon Cryptands, Crown Ethers and Podands

Low-K Precursors Based on Silicon Cryptands, Crown Ethers and Podands

Disclosed herein is the use of a silicon podand, silicon crown ether, or silicon cryptand to form a low-k dielectric film on a substrate.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DUSSARRAT CHRISTIAN, MCANDREW JAMES J.F
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed herein is the use of a silicon podand, silicon crown ether, or silicon cryptand to form a low-k dielectric film on a substrate.