METHOD FOR DEPOSITING LAYERS IN A CVD REACTOR AND GAS INLET ELEMENT FOR A CVD REACTOR

The invention relates to a method for coating one or more substrates with a layer the components of which are passed into a process chamber (7) in the form or at least two gases by means of a gas inlet element. The gases are introduced into respective chambers (1, 2) of the gas inlet element that ar...

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Bibliographische Detailangaben
1. Verfasser:	KAEPPELER JOHANNES
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention relates to a method for coating one or more substrates with a layer the components of which are passed into a process chamber (7) in the form or at least two gases by means of a gas inlet element. The gases are introduced into respective chambers (1, 2) of the gas inlet element that arranged one on top of the other and enter the process chamber (7) through gas outlet openings (3, 4) leading to the process chamber (7). The aim of the invention is to improve the aforementioned method or aforementioned device for producing homogeneous layers. For this purpose, each of the two chambers is subdivided into two compartments (1a, 1b; 2a, 2b) each which are arranged one on top of the other to be substantially congruent. The two process gases enter the process chamber separately from each other in the circumferential direction so that the substrates (10) lying on substrate supports (9), arranged in a ring and forming the base of the process chamber (7), are subsequently exposed to different process gases following a rotation of the substrate support (9) about its axis (9').