Method for delineation of phase change memory cell via film resistivity modification

Method for delineation of phase change memory cell via film resistivity modification

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducin...

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Bibliographische Detailangaben
Hauptverfasser: WONG KEITH KWONG HON, ARNOLD JOHN CHRISTOPHER, GAIDIS MICHAEL CHRISTOPHER, RADENS CARL JOHN, HSU LOUIS L, DALTON TIMOTHY JOSEPH, CLEVENGER LAWRENCE ALFRED, YANG CHIHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.