Resistance Changing Memory Cell

An integrated circuit includes a plurality of programmable metallization memory cells. Each memory cell includes a memory element having a first electrode layer, a second electrode layer, and a resistance changing material layer arranged between the first electrode layer and the second electrode lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BRUCHHAUS RAINER, SYMANCZYK RALF
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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