Resistance Changing Memory Cell

Resistance Changing Memory Cell

An integrated circuit includes a plurality of programmable metallization memory cells. Each memory cell includes a memory element having a first electrode layer, a second electrode layer, and a resistance changing material layer arranged between the first electrode layer and the second electrode lay...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BRUCHHAUS RAINER, SYMANCZYK RALF
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An integrated circuit includes a plurality of programmable metallization memory cells. Each memory cell includes a memory element having a first electrode layer, a second electrode layer, and a resistance changing material layer arranged between the first electrode layer and the second electrode layer. The resistance changing material layer includes an active matrix material layer made of a chalcogenide material including at least one chalcogen and at least one electropositive element, wherein the chalcogenide material is not GeS, GeSe, AgSe or CuS.