CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS

CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS

Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor, while al...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HOENTSCHEL JAN, SALZ HEIKE, WEI ANDY
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor, while also providing a strain component in the transistor width direction when the contact material may be provided with a desired internal stress level.