IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS

A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross field area deposition rate of about 25 to 70 nm/min and simultaneously etching the barrier layer to establish a net field area deposition rate of about 5 to 40 nm/min. The method may also include first performing a protective layer deposition step with a field area deposition rate of about 5 to 20 nm/min without etching the underlying surface then performing a surface modification step with gross deposition and simultaneous etching at a field modification net deposition rate of about -10 to +40 nm/min.