METHOD OF FORMING A METAL SILICIDE LAYER, DEVICES INCORPORATING METAL SILICIDE LAYERS AND DESIGN STRUCTURES FOR THE DEVICES
Electronic devices and design structures of electronic devices containing metal silicide layers. The devices include: a thin silicide layer between two dielectric layers, at least one metal wire abutting a less than whole region of the silicide layer and in electrical contact with the silicide layer...
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| creator | ANDERSON FELIX PATRICK MCDEVITT THOMAS LEDDY WHITE ERIC JEFFREY HE ZHONG-XIANG |
| description | Electronic devices and design structures of electronic devices containing metal silicide layers. The devices include: a thin silicide layer between two dielectric layers, at least one metal wire abutting a less than whole region of the silicide layer and in electrical contact with the silicide layer. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD OF FORMING A METAL SILICIDE LAYER, DEVICES INCORPORATING METAL SILICIDE LAYERS AND DESIGN STRUCTURES FOR THE DEVICES |
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