METHOD OF FORMING A METAL SILICIDE LAYER, DEVICES INCORPORATING METAL SILICIDE LAYERS AND DESIGN STRUCTURES FOR THE DEVICES

Electronic devices and design structures of electronic devices containing metal silicide layers. The devices include: a thin silicide layer between two dielectric layers, at least one metal wire abutting a less than whole region of the silicide layer and in electrical contact with the silicide layer...

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Bibliographische Detailangaben
Hauptverfasser: ANDERSON FELIX PATRICK, MCDEVITT THOMAS LEDDY, WHITE ERIC JEFFREY, HE ZHONG-XIANG
Format: Patent
Sprache:eng
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Zusammenfassung:Electronic devices and design structures of electronic devices containing metal silicide layers. The devices include: a thin silicide layer between two dielectric layers, at least one metal wire abutting a less than whole region of the silicide layer and in electrical contact with the silicide layer.