DEVICE FOR AMPLIFYING A BROADBAND RF SIGNAL

The present invention relates to a microwave signal amplification device comprising a cascode cell (60). The cascode cell comprises at least two transistors (31, 32). The gate of a first transistor (31) is connected to the input (E) of said device, the drain of the second transistor (32) is connected to the output (S), and the source of the second transistor (32) is connected to the drain of the first transistor (31). A variable-impedance circuit (50) is connected to the gate of the second transistor (32). Embodiments of the invention are used notably for microwave receivers, for example in the case of high bit rate links or other applications requiring reception over a broad band of frequencies.