TRANSPARENT MULTILAYER FILM, METHOD OF PRODUCING THE SAME, AND LIQUID LENS

A method of producing a transparent multilayer film which enables to easily deposit a transparent multilayer film without changing a target material is provided, and a transparent multilayer film formed by the method of producing a transparent multilayer film and a liquid lens including the transpar...

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Bibliographische Detailangaben
1. Verfasser:	KIRITA SHINA
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PERFORMING OPERATIONS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of producing a transparent multilayer film which enables to easily deposit a transparent multilayer film without changing a target material is provided, and a transparent multilayer film formed by the method of producing a transparent multilayer film and a liquid lens including the transparent multilayer film are provided. A transparent conductive film is deposited on a base by sputtering a target 3 made of ZnO containing any of Al2O3, Ga2O3, and SiO2 using a sputtering gas without a reactive gas being present or in the presence of a reactive gas, and a transparent insulating film is then deposited on the transparent conductive film by sputtering the target using a sputtering gas in the presence of a reactive gas, thereby forming a transparent multilayer film.