METHOD OF DETECTING REPEATING DEFECTS IN LITHOGRAPHY MASKS ON THE BASIS OF TEST SUBSTRATES EXPOSED UNDER VARYING CONDITIONS

Mask defects, such as crystal growth defects and the like, may be efficiently detected and estimated at an early stage of their development by generating test images of the mask under consideration and inspecting the images on the basis of wafer inspection techniques in order to identify repeatedly...

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Bibliographische Detailangaben
Hauptverfasser:	GRUNDKE WOLFRAM, GRIEBENOW UWE, POOCK ANDRE, MAZUR MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	Mask defects, such as crystal growth defects and the like, may be efficiently detected and estimated at an early stage of their development by generating test images of the mask under consideration and inspecting the images on the basis of wafer inspection techniques in order to identify repeatedly occurring defects. In some illustrative embodiments, the exposure process for generating the mask images may be performed on the basis of different exposure parameters, such as exposure doses, in order to enhance the probability of detecting defects and also estimating the effect thereof depending on the varying exposure parameters. Consequently, increased reliability may be achieved compared to conventional direct mask inspection techniques.