ELECTRON BEAM WRITING APPARATUS AND POSITION DISPLACEMENT AMOUNT CORRECTING METHOD

The present invention provides an electron beam writing apparatus and an image placement error correcting method each capable of calculating a high-accuracy correction amount relative to an image placement error in consideration of a difference in required unit area of height distribution data betwe...

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Bibliographische Detailangaben
1. Verfasser:	YOSHITAKE SHUSUKE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides an electron beam writing apparatus and an image placement error correcting method each capable of calculating a high-accuracy correction amount relative to an image placement error in consideration of a difference in required unit area of height distribution data between the shape of a back surface of an EUV mask and the shape of a surface of a pin chuck. Of back surface shape data of the EUV mask necessary to perform an image placement error correction of each pattern, the back surface shape data of a position brought into contact with each pin of the pin chuck is extracted. The image placement error is calculated only from the extracted back surface shape data.