CIRCUIT AND METHOD FOR A GATE CONTROL CIRCUIT WITH REDUCED VOLTAGE STRESS

Circuit and method for a gate control output circuit having reduced voltage stress on the devices is disclosed. In a circuit of MOS transistors for supplying an output to control a transfer gate, the output having a high voltage level that exceeds a supply voltage, first and second clamping circuits are provided. The first clamping circuit ensures a voltage between the gate and the source/drain and drain/source of a PMOS transistor that couples a pumped voltage to the output does not exceed a predetermined voltage. The second clamping circuit ensures that the voltage between the gate of an NMOS transistor and the output which is coupled to the drain/source of the NMOS transistor does not exceed a predetermined amount. The clamping circuits prevent gate stress problems on the transistors by ensuring the voltages between the gates and the source/drain and drain/source terminals do not exceed predetermined voltages.