Crystalline Semiconductor Stripes

Crystalline semiconductor stripes and an associated fabrication process are provided. The method provides an insulator substrate, and deposits a semiconductor layer overlying the insulator substrate. The semiconductor layer is irradiated using a scanning step-and-repeat laser annealing process, which agglomerates portions of the semiconductor layer. In response to cooling agglomerated semiconductor material, oriented crystalline semiconductor stripes are formed on the insulator substrate. The crystalline semiconductor stripes are aligned approximately with a straight line stripe axis overlying a top surface of the insulating substrate. Each crystalline semiconductor stripe includes a plurality of consecutive ring segments aligned with the stripe axis. The rings segments have a width about equal to the laser annealing process step distance. The crystalline semiconductor stripes typically have a top surface shape of a truncated cylinder or a parabolic cross section.