Nonvolatile Memory Device and Read Method Thereof

Disclosed is a read method of a non-volatile memory device which includes performing a first read operation in which a first read voltage is applied to a selected word line. If a read fail arises at the first read operation, a second read operation is performed in which a second read voltage lower t...

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Bibliographische Detailangaben
Hauptverfasser: HAN EUI-GYU, KANG HYUNG-SEOK, KIM HOO-SUNG
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a read method of a non-volatile memory device which includes performing a first read operation in which a first read voltage is applied to a selected word line. If a read fail arises at the first read operation, a second read operation is performed in which a second read voltage lower than the first read voltage is applied to the selected word line. If no read fail arises at the second read operation, the read fail generated at the first read operation is cured by performing a program operation.