POLISHING PROCESS FOR PRODUCING DAMAGE FREE SURFACES ON SEMI-INSULATING SILICON CARBIDE WAFERS

POLISHING PROCESS FOR PRODUCING DAMAGE FREE SURFACES ON SEMI-INSULATING SILICON CARBIDE WAFERS

A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equ...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EVERSON WILLIAM J, HEYDEMANN VOLKER D, GAMBLE RICHARD, SNYDER DAVID
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).