Semiconductor Integrated Circuit Device and Method of Manufacturing the Same

Provided is a manufacturing method of a semiconductor integrated circuit device having a plurality of first MISFETs in a first region and a plurality of second MISFETs in a second region, which comprises forming a first insulating film between two adjacent regions of the first MISFET forming regions...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIDA SUSUMU, SAITOU KAZUNARI, YASUOKA HIDEKI, KOUKETSU MASAMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Provided is a manufacturing method of a semiconductor integrated circuit device having a plurality of first MISFETs in a first region and a plurality of second MISFETs in a second region, which comprises forming a first insulating film between two adjacent regions of the first MISFET forming regions in the first region and the second MISFET forming regions in the second region; forming a second insulating film over the surface of the semiconductor substrate between the first insulating films in each of the first and second regions; depositing a third insulating film over the second insulating film; forming a first conductive film over the third insulating film in the second region; forming, after removal of the third and second insulating films from the first region, a fourth insulating film over the surface of the semiconductor substrate in the first region; and forming a second conductive film over the fourth insulating film; wherein the third insulating film remains over the first insulating film in the second region. The present invention makes it possible to raise the threshold voltage of a parasitic MOS and in addition, to suppress occurrence of an NBT phenomenon.